Mitigation of resonance in RF high power amplifier enclosure

摘要

This paper presents a novel and cost effective way to mitigate the resonance caused by the enclosure of RF Amplifier circuits. A Grounded metallic post has been used to break down the cavity size. The cavity resonance coupled with the power amplifier circuit, draw huge quiescent current which can potentially breakdown the device. The resonance affects the gain, flatness, Spurious, IRL, ACPR and P1dB of the RFPA. The junction temperature of the transistor, Tj has been simulated for two different materials for the enclosure lid — with the RF absorber material and Aluminum. RF absorber as lid material is found to increase Tj of the Transistor.