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3.1 POWER9™: A processor family optimized for cognitive computing with 25Gb/s accelerator links and 16Gb/s PCIe Gen4

机译:3.1 POWER9™:针对认知计算而优化的处理器系列,具有25Gb / s加速器链接和16Gb / s PCIe Gen4

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Cognitive computing and cloud infrastructure require flexible, connectable, and scalable processors with extreme IO bandwidth. With 4 distinct chip configurations, the POWER9 family of chips delivers multiple options for memory ports, core thread counts, and accelerator options to address this need. The 24-core scale-out processor is implemented in 14nm SOI FinFET technology [1] and contains 8.0B transistors. The 695mm2 chip uses 17 levels of copper interconnect: 3–64nm, 2–80nm, 4–128nm, 2–256nm, 4–360nm pitch wiring for signals and 2– 2400nm pitch wiring levels for power and global clock distribution. Digital logic uses three thin-oxide transistor Vts to balance power and performance requirements, while analog and high-voltage circuits eliminated thick-oxide devices providing process simplification and cost reduction. By leveraging the FinFET's increased current per area, the base standard cell image shrunk from 18 tracks per bit in planar 22nm to 10 tracks per bit in 14nm providing additional area scaling.
机译:认知计算和云基础架构需要具有极高IO带宽的灵活,可连接和可扩展的处理器。通过9种不同的芯片配置,POWER9系列芯片为内存端口,核心线程数和加速器选项提供了多种选择,可以满足这一需求。 24核横向扩展处理器采用14nm SOI FinFET技术[1]实现,并包含8.0B晶体管。 695mm2芯片使用17级铜互连:3–64nm,2–80nm,4–128nm,2–256nm,4–360nm间距布线用于信号传输,而2–2400nm间距布线用于电源和全局时钟分配。数字逻辑使用三个薄氧化物晶体管Vts来平衡功率和性能要求,而模拟和高压电路消除了厚氧化物器件,从而简化了工艺并降低了成本。通过利用FinFET的每单位面积增加的电流,基本标准单元图像从平面22nm的每位18迹缩小到14nm的每位10迹,从而提供了额外的面积缩放。

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