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Critical current and electric transport properties of superconducting epitaxial Nb(Ti)N submicron structures

机译:超导外延Nb(Ti)N亚微米结构的临界电流和电传输性质

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Critical current and current-voltage characteristics of epitaxial Nb(Ti)N submicron ultrathin structures were measured as function of temperature. For 700-nm-wide bridge we found current-driven vortex de-pinning at low temperatures and thermally activated flux flow closer to the transition temperature, as the limiting factors for the critical current density. For 100-nm-wide meander we observed combination of phase-slip activation and vortex-anti-vortex pair (VAP) thermal excitation. Our Nb(Ti)N meander structure demonstrates high de-pairing critical current densities ~10~7 A/cm~2 at low temperatures, but the critical currents are much smaller due to presence of the local constrictions.
机译:测量了外延Nb(Ti)N亚微米超薄结构的临界电流和电流-电压特性随温度的变化。对于700 nm宽的电桥,我们发现在低温下电流驱动的涡旋脱钉和更接近转变温度的热激活磁通量流是临界电流密度的限制因素。对于100 nm宽的弯曲,我们观察到了相移激活和涡流-反涡流对(VAP)热激励的组合。我们的Nb(Ti)N曲折结构在低温下显示出较高的去配对临界电流密度〜10〜7 A / cm〜2,但由于存在局部收缩,临界电流要小得多。

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