New silicon photodiodes for detection of the 1064 nm wavelength radiation

摘要

In this paper a concept of a new bulk structure of p~+-v-n~+ silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8-segment photodiode and the 32-element linear photodiode array that were developed according to the concept are described. Electric and photoelectric parameters of the photodiodes mentioned above are presented.