Impact of structure mounting of nitride laser bars on the emitted optical power

摘要

In this paper, an impact of mounting of structures of nitride laser bars their performance, emitted optical power in particular, is presented. The laser bars of nitride edge-emitting lasers of ridge-waveguide type the InGaN/GaN active areas have been considered. Laser performance has been analysed with the aid of an advanced self-consistent thermal-electrical model, calibrated using experimental data for a single diode laser. The simulated laser bars emit at 408 nm. An optimal number of laser emitters and their various arrangments have been considered. An appliation of Cu heat sinks of various dimensions as well as the p-side-up or the p-side-down laser configurations have been analysed. Moreover a possible application of a diamond heat spreader has been also taken into account.