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Snubber capacitors optimization for super-junction MOSFET in the ZVS full-bridge inverter

机译:ZVS全桥逆变器中超结MOSFET的缓冲电容器优化

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A zero-voltage switching (ZVS) full-bridge inverter and its modulation schemes have been investigated in previous literatures. Parallel snubber capacitors are utilized to reduce the turn-off loss of super-junction MOSFETs in the ZVS full-bridge inverter. However due to the MOSFET's nonlinear output capacitance together with the parallel snubber capacitor, the ZVS commutation is unable to be realized and high voltage spike occurs on switching devices under light load condition. The problem is solved by changing the position of the snubber capacitors to reduce the turn-off rising time of drain-source voltage. The validity of snubber capacitors optimization is verified by experiments on a ZVS full-bridge inverter prototype.
机译:先前文献中已经研究了零电压开关(ZVS)全桥逆变器及其调制方案。并联缓冲电容器用于减少ZVS全桥逆变器中超结MOSFET的关断损耗。但是,由于MOSFET的非线性输出电容以及并联的缓冲电容器,无法实现ZVS换向,并且在轻载条件下在开关器件上会出现高压尖峰。通过改变缓冲电容器的位置以减少漏极-源极电压的关断上升时间来解决该问题。通过在ZVS全桥逆变器原型上进行的实验验证了缓冲电容器优化的有效性。

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