A 1000A 6.5kV Power Module Enabled by Reverse-Conducting Trench-IGBT-Technology

摘要

A reverse conducting IGBT module based on the well-established high insulation 6.5kV-package platform for single switches is presented. The function of the IGBT-switch and the freewheeling diode is integrated into a single die enabling the higher current rating of 1000A. The maximum allowed junction temperature remains at 125deg C as for the existing 6.5kV module portfolio. The ampacity enhancement is enabled by the significantly improved thermal resistance due to the increased effective silicon area for both operation in IGBT- and diode-mode. Additional benefit results from a reduction of the switching losses by proper gate control schemes during diode operation. The ampacity increase towards 1000A is therefore done without any cutbacks of the power cycling reliability, yet an increase of the effectiveness.