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First principle calculations of aluminum destruction caused by chloride ions - effect of interstitial chloride ions, charging and hydrogen

机译:氯离子引起的铝破坏的第一原理计算-间隙氯离子,电荷和氢的影响

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In this work, several atomic models concerning the surface destruction of bare aluminum (Al) have been explored based on density functional theory (DFT). The aim is to determine the effect of interstitial chloride ions (CT), charging, as well as hydrogen (in atomic form, H). The current study suggests that the total energy increases as Cl~- approaches the Al surface. Furthermore, the optimum path when Cl~- transfers towards and through the Al surface can be predicted by the calculated energy barrier. Stable positions for Cl~- are found at some interstitial sites beneath the Al surface. The effect of interstitial Cl~- on the transferring behavior of subsequent Cl~- has also been studied. In our previous work it was concluded that it is difficult for Cl~- to destroy the Al surface when the Cl~- coverage is less than 2/3 of a monolayer (ML). Whereas in this work the focus is on much lower Cl~- coverage (ML < 1/3) and also involves some other prerequisites that are important for Al corrosion - charge and hydrogen. Charging of a system can greatly affect electrochemical processes on the Al surface. Hydrogen embrittlement is common in some Al alloys and H also takes part in some electrochemical reactions. Through structural and electronic analysis, it is shown herein that the destruction of the Al surface will be aggravated by charging the system in the presence of H. In addition, a special substructure has formed as a reaction product even when the Cl~- coverage is low (ML < 1/3).
机译:在这项工作中,基于密度泛函理论(DFT),探索了几种与裸露铝(Al)的表面破坏有关的原子模型。目的是确定间质氯离子(CT),带电以及氢(原子形式为H)的影响。当前的研究表明,总能量随着Cl〜-接近Al表面而增加。此外,可以通过计算出的能垒来预测当Cl-向铝表面传递并通过铝表面时的最佳路径。在Al表面下方的一些间隙位置发现了Cl〜-的稳定位置。还研究了间隙Cl〜-对后续Cl〜-的传递行为的影响。在我们以前的工作中得出的结论是,当Cl〜-的覆盖率小于单层(ML)的2/3时,Cl〜-很难破坏Al表面。而在这项工作中,重点放在低得多的Cl〜-覆盖率(ML <1/3)上,还涉及对Al腐蚀很重要的其他先决条件-电荷和氢。系统的充电会极大地影响Al表面的电化学过程。氢脆在某些铝合金中很常见,而H也参与某些电化学反应。通过结构和电子分析,本文表明通过在存在H的情况下对体系进行充电将加剧Al表面的破坏。此外,即使当Cl-被覆盖为-时,也形成了特殊的亚结构作为反应产物。低(ML <1/3)。

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