Gate tunable THz plasmon generation on graphene based semiconductor chip via backward 2nd order nonlinearity

摘要

We demonstrate a graphene-alumina-graphene heterostructured semiconductor chip, on which THz plasmons are generated via backward phase-matched 2nd nonlinearity all-optically. The on-chip plasmons are effectively gate tunable, with photon-efficiency ~10-4, and Q factor > 60.