Practical operation considerations for memristive integrating sensors

摘要

The effects of key operating parameter on the practical operation of a recently proposed memristor-based neuronal activity sensor are investigated. A test memristor device is repeatedly subjected to a reference neural recording input signal that has been pre-processed using different settings. The resulting changes in the ability of the device to capture and store neuronal activity as resistive state transitions are assessed. It is found that resistive switching saturation is an important performance limiting factor, combatable by resetting the memristor. Higher desired sensitivity (ability to detect less prominent features in the neural waveform) necessitates more frequent resets.