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Solar-blind photodetectors and focal plane arrays based on AlGaN

机译:基于AlGaN的日盲光电探测器和焦平面阵列

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Ⅲ-Nitride material system (AlGaInN) possesses unique optical, electrical and structural properties such as a wide tunable direct bandgap, inherent fast carrier dynamics; good carrier transport properties, high breakdown fields; and high robustness and chemical stability. Recent technological advances in the wide bandgap AlGaN portion of this material system have led to a renewed interest in ultraviolet (UV) photodetectors. These detectors find use in numerous applications in the defense, commercial and scientific arenas such as covert space-to-space communications, early missile threat detection, chemical and biological threat detection and spectroscopy, flame detection and monitoring, UV environmental monitoring, and UV astronomy.~1,2,3 Back illuminated detectors operating in the solar blind region are of special interest. Back illumination allows the detector to be hybridized to a silicon read-out integrated circuit, epi-side down, and still collect light through the back of the transparent sapphire substrate. This allows the realization of solar blind focal plane arrays (FPAs) for imaging applications. Solar-blind FPAs are especially important because of the near total absence of any background radiation in this region. In this talk, we will present our recent back-illuminated solar-blind photodetector, mini-array, and FPA results. By systematically optimizing the design of the structure we have realized external quantum efficiencies (EQE) of in excess of 89% for pixel-sized detectors. Based on the absence of any anti-reflection coating, this corresponds to nearly 100% internal quantum efficiency. At the same time, the dark current remains below ~2 × 10~(-9) A/cm~2 even at 10 volts of reverse bias. The detector has a very sharp falloff starting at 275 with the UV-solar rejection of better than three orders of magnitude, and a visible rejection ratio is more than 6 orders of magnitude. This high performance photodetector design was then used as the basis of the realization of solar-blind FPA. We demonstrated a 320×256 FPA with a peak detection wavelength of 278nm. The operability of the FPA was better than 92%, and excellent corrected imaging was obtained.
机译:Ⅲ-氮化物材料系统(AlGaInN)具有独特的光学,电学和结构特性,例如宽的可调直接带隙,固有的快速载流子动力学特性;良好的载流子传输特性,高击穿场;以及高耐用性和化学稳定性。这种材料系统的宽带隙AlGaN部分的最新技术进步引起了人们对紫外线(UV)光电探测器的新兴趣。这些探测器可用于国防,商业和科学领域的众多应用中,例如秘密的空对空通信,早期的导弹威胁检测,化学和生物威胁检测和光谱学,火焰检测和监测,紫外线环境监测以及紫外线天文学〜1、2、3在日盲区工作的背照式探测器引起了人们的特别关注。背光照明可使检测器与硅读出集成电路混合,外延面朝下,并仍通过透明蓝宝石衬底的背面收集光。这允许实现用于成像应用的太阳盲焦平面阵列(FPA)。由于该区域几乎完全没有任何背景辐射,因此日盲FPA尤其重要。在本次演讲中,我们将介绍我们最近的背照式太阳盲光电探测器,微型阵列和FPA结果。通过系统优化结构设计,我们实现了像素尺寸探测器的外部量子效率(EQE)超过89%。基于不存在任何抗反射涂层,这相当于接近100%的内部量子效率。同时,即使在反向偏置电压为10伏时,暗电流仍保持在〜2×10〜(-9)A / cm〜2以下。该检测器具有非常陡峭的衰减,始于275,其紫外-太阳能抑制性能优于三个数量级,可见光的抑制率大于6个数量级。然后,将这种高性能的光电探测器设计用作实现太阳盲FPA的基础。我们展示了320×256 FPA,峰值检测波长为278nm。 FPA的可操作性优于92%,并获得了出色的校正成像。

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