BiCMOS 7.5 µA power-on reset pulse generator circuit with precise threshold level and hysteresis

摘要

The design and characterization of a robust pulse generator power-on reset circuit, with accurate bandgap based thresholds, brown-out event detection capability and hysteresis, realized in 0.25 μm SiGe BiCMOS technology is presented. The resulting circuit consumes 7.5 μA and occupies 360×440nm area. Measured reset pulses longer than 340 μs are generated. The design was simulated with a voltage and temperature range of 2.25 to 2.75V and -40 to +120°C, respectively.