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Quantum-dot Semiconductor Optical Amplifiers: Novel Technique for Gain Management and Noise Suppression

机译:量子点半导体光放大器:增益管理和噪声抑制的新技术

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The saturation behavior of a quantum-dot semiconductor optical amplifier (QD-SOA) is governed by a complex combination of ground state and excited state replenishment in saturation condition. Also, due to inhomogeneously broadened gain of a QD-SOA, various spectral regions arc coupled via the common quantum dot (QD) reservoir, i.e., wetting layer, and the barrier layer. Hence, a frequency domain model has been developed to effectively exhibit the saturation properties of a QD-SOA in this article. Based on performed experimental tests, and also, developed model we exploit gain dynamic, gain saturation characteristics and noise suppression capability at different SOA operation conditions. The effect of an external beam on different characteristics of QD-SOAs has been investigated experimentally when the applied beam is in the gain or transparency region of the amplifiers. Also, based on different external beam power levels, the performance of the discussed method is characterized in terms of signal-to-noise ratio at the input of the QD-SOA, and output quality factor, which directly quantifies the level of intensity noise. A comprehensive comparison is performed between the quality factor of noisy input bit stream and the output data which contains the pattern effect at higher bit rates. Finally, noise suppression specification of the device at different bias currents is discussed.
机译:量子点半导体光放大器(QD-SOA)的饱和行为受饱和状态下基态和激发态补充的复杂组合支配。而且,由于QD-SOA的增益不均匀地变宽,所以各种光谱区域通过共同的量子点(QD)贮存器(即,润湿层和阻挡层)耦合。因此,本文开发了一种频域模型来有效展示QD-SOA的饱和特性。基于已进行的实验测试以及已开发的模型,我们在不同的SOA操作条件下利用增益动态,增益饱和特性和噪声抑制能力。当施加的光束在放大器的增益或透明区域时,已通过实验研究了外部光束对QD-SOA不同特性的影响。而且,基于不同的外部光束功率水平,所讨论的方法的性能以QD-SOA输入处的信噪比和输出质量因数(直接量化强度噪声的水平)为特征。在嘈杂的输入比特流的质量因数和包含较高比特率下的图案效应的输出数据之间进行全面比较。最后,讨论了在不同偏置电流下器件的噪声抑制指标。

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