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Observing dislocation motion induced by laser shock peening in KI

机译:观察KI中激光冲击喷丸引起的位错运动

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Laser shock peening (LSP) is applied to potassium iodide (KI) crystals. A selective etching technique is used to reveal the dislocation structure induced by the LSP process, confirming that LSP multiplies and moves dislocations in an alkali halide. Increasing the crystal temperature during LSP is shown to eliminate cracking along cleavage-planes caused by the LSP process and increases the range of dislocation motion in the crystal. LSP has long been used to increase surface toughness and fatigue life in metals. Having shown that LSP affects the mechanical properties in the ionic crystal KI, we propose studying the possible benefit of LSP in other halide crystals, including scintillators. One potential application might be reducing crack initiation and propagation at surfaces during Bridgman growth.
机译:激光冲击喷丸(LSP)应用于碘化钾(KI)晶体。使用选择性蚀刻技术来揭示由LSP工艺引起的位错结构,从而确认LSP在碱金属卤化物中增加并移动了位错。显示出在LSP过程中提高晶体温度可以消除由LSP过程引起的沿分裂平面的破裂,并增加了晶体中位错运动的范围。长期以来,LSP一直用于提高金属的表面韧性和疲劳寿命。已经证明LSP影响离子晶体KI中的机械性能,我们建议研究LSP在其他闪烁体晶体(包括闪烁体)中的可能益处。一种潜在的应用可能是减少Bridgman增长过程中表面的裂纹萌生和扩展。

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