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Challenge of MTJ-based nonvolatile logic-in-memory architecture for ultra low-power and highly dependable VLSI computing

机译:基于MTJ的非易失性内存逻辑架构对超低功耗和高度可靠的VLSI计算的挑战

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Novel logic-LSI architecture, “nonvolatile logic-in-memory (NV-LIM) architecture,” where nonvolatile storage elements are distributed over a logic-circuit plane, is proposed as a promising candidate to overcome performance wall and power wall due to the present CMOS-only-based logic LSIs. Some concrete design examples based on the NV-LIM architecture are demonstrated and their usefulness is discussed in comparison with the corresponding CMOS-only-based realization.
机译:新型逻辑LSI架构,即“非易失性内存在内存(NV-LIM)架构”,其中非易失性存储元件分布在逻辑电路平面上,被认为是克服性能壁垒和功率壁垒的有前途的候选者目前基于CMOS的逻辑LSI。演示了一些基于NV-LIM架构的具体设计示例,并与相应的仅基于CMOS的实现进行了比较,讨论了它们的有用性。

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