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Heavy Ion and Proton Test Results for Micron 4 Gb NAND Flash Memory

机译：Micron 4 GB NAND闪存的重离子和质子测试结果

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摘要

This paper describes the methodology and test results from heavy ion and proton testing of the Micron 4 Gb NAND flash memory, with particular attention to characterization of the transient high current effect previously observed.

机译：本文介绍了微离子和微米4 GB NAND闪存的重离离子和质子测试的方法和测试，特别注意先前观察到的瞬态高电流效果的表征。

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来源
《IEEE Radiation Effects Data Workshop 》|2016年|317 p.|共7页
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作者
James S. Hack; Kodie Altvater; Deas Brown; Paul Dudek; Douglas Jaeger; Ellwood Lane; John Lindley; Brainton Song; Thomas Tittel;
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中图分类无线电技术 ;
关键词
Testing; Ions; Protons; Performance evaluation; Telephone sets; Electronic mail; Radiation effects;

机译：测试;离子;质子;性能评估;电话机;电子邮件;辐射效应;

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专利

1. A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate [J] . Jeong Woopyo, Im Jae-woo, Kim Doo-Hyun, Solid-State Circuits, IEEE Journal of . 2016 ,第1期

机译：具有1 Gb / s I / O速率的128 Gb 3b /单元V-NAND闪存
2. Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory [J] . Oldham T. R., Friendlich M. R., Wilcox E. P., Nuclear Science, IEEE Transactions on . 2012 ,第6期

机译：NAND闪存的激光测试结果与重离子结果的相关性
3. Using Charge Accumulation to Improve the Radiation Tolerance of Multi-Gb NAND Flash Memories [J] . Kay M.J., Gadlage M.J., Duncan A.R., IEEE Transactions on Nuclear Science . 2013 ,第6aPart1期

机译：使用电荷积累来提高多Gb NAND闪存的辐射容限
4. Heavy Ion and Proton Test Results for Micron 4 Gb NAND Flash Memory [C] . James S. Hack, Kodie Altvater, Deas Brown, IEEE Radiation Effects Data Workshop . 2016

机译：微米4 Gb NAND闪存的重离子和质子测试结果
5. Wafer probe and package test failure analysis of NAND flash memory [D] . Kalva, Deepa. 2007

机译：NAND闪存的晶片探头和包装测试失败分析
6. CMOS-compatible ferroelectric NAND flash memory for high-density low-power and high-speed three-dimensional memory [O] . Min-Kyu Kim, Ik-Jyae Kim, Jang-Sik Lee 2021

机译：CMOS兼容的铁电NAND闪存用于高密度低功耗和高速三维内存
7. Investigation of Current Spike Phenomena During Heavy Ion Irradiation of NAND Flash Memories [O] . Mavis David G., McMorrow Dale, Oldham Timothy R., 2011

机译：NAND闪存重离子辐射过程中电流尖峰现象的研究

Heavy Ion and Proton Test Results for Micron 4 Gb NAND Flash Memory

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