A High Power X-Band GaN-Based Short-Pulse Power Amplifier

摘要

A X-band short-pulse high power amplifier (HPA) with high output power and high gain was proposed and implemented in this work. The HPA was realized by cascading a driving amplifier, a high power GaN FET and pulse control circuit. Under the pulse condition of 1 kHz PRF and 1% duty cycle, a maximum pulsed peak power level of 63 W is observed at the frequency of 8.2 GHz. In the frequency band from 8 GHz to 9 GHz, the short-pulsed HP A delivers more than 50W of output power, and the PAE is higher than 24.9%. The gain varies between 41.08 dB and 42.01 dB with less than ±pmb1 dB gain variation. For demonstration, one prototype was fabricated and measured, reasonable results are observed.