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26.3 A 25-to-38GHz, 195dB FoMT LC QVCO in 65nm LP CMOS Using a 4-Port Dual-Mode Resonator for 5G Radios

机译:26.3 A 25-To-38GHz,195dB FOMT LC QVCO在65nm LP CMOS中,使用4端口双模谐振器进行5G无线电

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Because of their promise of wide bandwidths and high data-rates, fifth-generation (5G) wireless systems are expected to be deployed worldwide over the next decade. Several bands in the 25-to-40GHz range are allocated for 5G radios. A single widely tunable LC VCO covering the required bands is difficult to design, but is more compact than a set of multiple narrowly tuned VCOs, and is, therefore, preferred. In practice, it is difficult to simultaneously achieve low phase noise and wide tuning range by varying only the capacitor in an LC VCO because (a) switchable capacitor banks have a poor quality factor, Q, at millimeter-wave frequencies and degrade the phase noise, and (b) using wide switches to increase Q increases parasitics and reduces the tuning range.
机译:由于他们承诺广泛的带宽和高数据速率,预计第五代(5G)的无线系统将在未来十年内部署全球。 25至40GHz范围内的几个带分配为5G无线电。覆盖所需频带的单个可调调谐的LC VCO难以设计,但比一组多个狭窄的VCO更紧凑,因此优选。在实践中,难以通过仅改变LC VCO中的电容器同时实现低相位噪声和宽调谐范围,因为(a)可切换电容器组具有差的质量因子,Q,毫米波频率并降低相位噪声(b)使用宽开关增加q增加寄生率并减少调谐范围。

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