首页> 外文会议>IEEE International Solid- State Circuits Conference >22.6 A 25Gb/s 4.4V-swing AC-coupled Si-photonic microring transmitter with 2-tap asymmetric FFE and dynamic thermal tuning in 65nm CMOS
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22.6 A 25Gb/s 4.4V-swing AC-coupled Si-photonic microring transmitter with 2-tap asymmetric FFE and dynamic thermal tuning in 65nm CMOS

机译:具有2抽头非对称FFE和65nm CMOS的动态热调谐功能的22.6 25Gb / s 4.4V摆幅交流耦合Si光子微环发射器

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Silicon photonic microring modulators (MRMs) offer a promising approach for realizing energy-efficient wavelength-division multiplexing (WDM) optical interconnects. For data-rates greater than 10Gb/s, depletion-mode MRMs are generally preferred over their injection-mode counterparts due to their shorter carrier lifetimes and resulting higher bandwidths. Unfortunately, these depletion-mode MRMs typically exhibit low PN junction tunability, thereby requiring higher modulation voltages in order to provide >6dB extinction ratios (ER). Furthermore, negative DC-biasing of the MRMs is necessary to maintain reverse-biased depletion-mode operation. In this work, a 5×25Gb/s hybrid-integrated MRM WDM transmitter is demonstrated that incorporates the following key advances: 1) an AC-coupled differential output driver that applies a 4.4V output-swing on the MRM while providing a tunable on-chip negative DC-bias; 2) a 2-tap non-linear digital FFE that compensates for optical-dynamics-induced bandwidth limitations; 3) a dynamic thermal tuning loop that stabilizes the MRM by minimizing thermally-induced wavelength fluctuations.
机译:硅光子微环调制器(MRM)为实现节能高效的波分复用(WDM)光互连提供了一种有前途的方法。对于大于10Gb / s的数据速率,由于耗尽型MRM具有较短的载波寿命和更高的带宽,因此通常比注入型MRM更可取。不幸的是,这些耗尽型MRM通常表现出低PN结可调性,从而需要更高的调制电压才能提供> 6dB的消光比(ER)。此外,MRM的负DC偏置对于维持反向偏置的耗尽模式工作是必要的。在这项工作中,展示了一种5×25Gb / s混合集成MRM WDM发射机,该发射机具有以下主要优点:1)交流耦合差分输出驱动器,该驱动器在MRM上施加4.4V输出摆幅,同时提供可调谐的-芯片负直流偏置; 2)2抽头非线性数字FFE,用于补偿光动力学引起的带宽限制; 3)动态热调谐环路,通过最小化热引起的波长波动来稳定MRM。

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