Negative differential resistance effect in ITO/TiO2/ITO based RRAM sandwich structures

机译：ITO / TiO 2 / ITO基RRAM夹层结构中的负微分电阻效应

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ITO/TiO/ITO based RRAM sandwich structures exhibited both large current-voltage hysteresis loop and voltage controlled negative differential resistance effects at room temperature. Resistance switching process was well interpreted and simulated using ion migration related filament model. We believed that the differential resistance effect originated from the combination results from the Joule heating and phase change or atomic rearrangement.

机译：基于ITO / TiO / ITO的RRAM夹层结构在室温下表现出大的电流-电压磁滞回线和电压控制的负微分电阻效应。使用与离子迁移相关的灯丝模型可以很好地解释和模拟电阻切换过程。我们认为，微分电阻效应源自焦耳加热和相变或原子重排的组合结果。

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《IEEE International Conference on Electron Devices and Solid-State Circuits》|2014年|1-2|共2页
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Peijian Zhang; Guangbing Chen; Yong Liu; Gangyi Hu; Zhaohuan Tang; Guohua Shui; Wensuo Chen; Yang Meng; Xinyu Pan; Hongwu Zhao;
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Joule heating; differential resistance; ion migration; resistance switching;

机译：焦耳热;微分电阻;离子迁移;电阻切换;

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Negative differential resistance effect in ITO/TiO2/ITO based RRAM sandwich structures

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