A new model of low-frequency noise in polycrystalline Silicon thin-film transistors

摘要

An new model for the 1/f noise of polycrystalline Silicon thin-film transistors (poly-Si TFTs) is proposed. The model attributes the 1/f noise to carrier number fluctuation and grain boundary (GB) barrier fluctuation, which both caused by carrier trapping/detrapping between the channel inversion carriers and the intra-grain traps within the GB depletion region for poly-Si TFTs. The model fits the noise data very well in the low drain current region, clarifying the origin of 1/f noise in this region.