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A ReRAM Memory Compiler with Layout-Precise Performance Evaluation

机译:具有布局精确性能评估的reram内存编译器

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This paper presents, for the first time, a design automation methodology to generate 1T-1R based Resistive Random Access Memory (ReRAM) arrays with layout-precise performance evaluation. A ReRAM memory compiler is developed and demonstrated on this basis with the ability to account for the unique peripheral circuits devoted to improving performance of ReRAM devices. Given target specifications (e.g. memory capacity, operating frequency), the compiler generates ReRAM sub-arrays and constructs area/power-optimized arrays with performance/power models for evaluation and design space exploration (DSE). The tool is demonstrated with ReRAM device models and 65nm CMOS technology.
机译:本文首次呈现设计自动化方法,以产生具有布局精确性能评估的1T-1R基于电阻随机存取存储器(RERAM)阵列。在此基础上开发并展示了RERAM Memory编译器,其能够考虑专门用于提高RERAM设备性能的独特外围电路。给定目标规范(例如,存储器容量,工作频率),编译器生成RERAM子阵列,并使用性能/功率模型构建区域/功率优化阵列,用于评估和设计空间探索(DSE)。该工具用Reram设备模型和65nm CMOS技术进行了演示。

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