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Sensitivity improvement for silicon MS-SW BG sensors by waveguide height increase or by waveguide suspension with supporting shape modification

机译:波导高度增加或通过支撑形状改造的波导高度增加或波导悬架对硅MS-SW BG传感器的敏感性改进

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摘要

Two methods for refractive index sensitivity improvement of silicon SW-MS BG refractive index sensors were considered. Height parameter was optimized and suspended waveguides were introduced. Experimentally obtained values were 850 nm/RIU and 1100 nm/RIU, respectively.
机译:考虑了两种用于硅SW-MS BG折射率传感器的折射率敏感性改进。 优化高度参数并介绍悬浮波导。 实验获得的值分别为850nm / Riu和1100nm / Riu。

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