首页> 外文会议>IEEE MTT-S International Microwave Symposium >High performance transmit/receive modules in 0.13 #x00B5;m SiGe:C BiCMOS for short range F-band MIMO radars
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High performance transmit/receive modules in 0.13 #x00B5;m SiGe:C BiCMOS for short range F-band MIMO radars

机译:采用0.13 µm SiGe:C BiCMOS的高性能发送/接收模块,适用于短距离F波段MIMO雷达

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Transmit and Receive (TX/RX) F-band radar modules are presented. Both modules are implemented in a state of the art SiGe:C BiCMOS featuring high-speed HBTs with fT/fmax of 300/500 GHz. The TX is based on a frequency octupler that consists of a cascade of three Gilbert cells, covering the upper F-band from 120–140 GHz and providing differential output power of up to 6 dBm, the highest values reported to date for BiCMOS. The RX uses the identical frequency octupler followed by a mixer, transformer and a differential LNA, giving altogether conversion gain of 25 dB. Both chips are packaged and connected to off-chip patch antennas using bondwire interconnects with dedicated compensation structures. Initial measurement trials proved full functionality of the realized frontend across 114–152 GHz. It has also been demonstrated that wire-bonding, when properly designed, is still an attractive solution for chip to antenna interconnects even above 110 GHz.
机译:介绍了发送和接收(TX / RX)F波段雷达模块。两种模块均以SiGe:C BiCMOS技术实现,该技术具有fT / fmax为300/500 GHz的高速HBT。 TX基于频率八倍频,它由三个吉尔伯特单元的级联组成,覆盖120-140 GHz的较高F频段,并提供高达6 dBm的差分输出功率,这是BiCMOS迄今为止报道的最高值。 RX使用相同的频率八倍频器,然后是混频器,变压器和差分LNA,总共具有25 dB的转换增益。两种芯片都经过封装,并使用具有专用补偿结构的键合线互连模块连接到片外贴片天线。初步的测量试验证明,已实现的前端在114–152 GHz范围内具有全部功能。还已经证明,即使设计适当,引线键合对于110 GHz以上的芯片到天线互连仍然是一种有吸引力的解决方案。

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