Non-contact probes for device and integrated circuit characterization in the THz and mmW bands

摘要

We present a novel, non-contact, on-wafer device characterization method covering both THz (300 GHz–3 THz) and mmW bands (60–300 GHz). Unlike existing contact probes which rely on fragile tips and physical contact with the device on the chip, the new non-contact probe setup is based on radiative coupling of vector network analyzer test ports into the coplanar waveguide environment of monolithic devices and integrated circuits via planar, on-chip, broadband antennas. The on-chip antennas act as “virtual” probe-tips on the test wafer and connect to the device through optimized, impedance matched coplanar waveguide (CPW) lines. Proof-of-concept validation is presented for the 325–750 GHz band using WR2.2 and WR1.5 frequency extender modules and a standard vector network analyzer as the backend. Owing to the non-contact nature, these new probes are free from wear/tear and fragility issues. More importantly, they are low cost and can be easily scaled beyond 900GHz where there is no existing solution for on-wafer device and integrated circuit testing.