The Characteristic of Organic Hole-Only Devices Based on Crosslinked Hole-Transport Layer

摘要

The preparation of organic electronics devices via solution process based on insoluble layer as well as it's preparation mechanism via oxetane ring-opening polymerisation has been known. This paper reports the electrical characteristic of the devices due to this polymerisation mechanism as oxidative, trityl, and photo cross linking. The devices were prepared by sandwich the organic hole-transport layer (HTL) material between two electrodes to be a hole-only diode. The measurement was carried out for current density versus electric-field strength characteristic as a function of oxidation potential, polymerisation mechanism, the amount of oxidant, and curing temperature. The measurement confirmed that the cross linked HTL layer successfully applied in electronic devices, the oxidative cross linking mechanism showed the doping effect, and the amount of oxidant influences the conductivity of cross linked layer.