首页> 外文会议>IEEE International Solid-State Circuits Conference >16.3 A 23Mb/s 23pJ/b fully synthesized true-random-number generator in 28nm and 65nm CMOS
【24h】

16.3 A 23Mb/s 23pJ/b fully synthesized true-random-number generator in 28nm and 65nm CMOS

机译:16.3在28nm和65nm CMOS上的23Mb / s 23pJ / b全合成真随机数发生器

获取原文

摘要

True random number generators (TRNGs) use physical randomness as entropy sources and are heavily used in cryptography and security [1]. Although hardware TRNGs provide excellent randomness, power consumption and design complexity are often high. Previous work has demonstrated TRNGs based on a resistor-amplifier-ADC chain [2], oscillator jitter [1], metastability [3-5] and other device noise [6-7]. However, analog designs suffer from variation and noise, making them difficult to integrate with digital circuits. Recent metastability-based methods [3-5] provide excellent performance but often require careful calibration to remove bias. SiN MOSFETs [6] exploit larger thermal noise but require post-processing to achieve sufficient randomness. An oxide breakdown-based TRNG [7] shows high entropy but suffers from low performance and high energy/bit. Ring oscillator (RO)-based TRNGs offer the advantage of design simplicity, but previous methods using a slow jittery clock to sample a fast clock provide low randomness [1] and are vulnerable to power supply attacks [8]. In addition, the majority of previous methods cannot pass all NIST randomness tests.
机译:真正的随机数生成器(TRNG)使用物理随机性作为熵源,并在加密和安全性中大量使用[1]。尽管硬件TRNG具有出色的随机性,但功耗和设计复杂度通常很高。先前的工作已经证明了基于电阻器-放大器-ADC链[2],振荡器抖动[1],亚稳[3-5]和其他设备噪声[6-7]的TRNG。但是,模拟设计会受到变化和噪声的影响,使其难以与数字电路集成。最近的基于亚稳定性的方法[3-5]提供了出色的性能,但通常需要仔细校准以消除偏差。 SiN MOSFET [6]利用较大的热噪声,但需要进行后处理才能获得足够的随机性。基于氧化物击穿的TRNG [7]表现出高熵,但性能低下且能量/位高。基于环形振荡器(RO)的TRNG提供了设计简单的优势,但是先前使用慢抖动时钟采样快速时钟的方法提供了较低的随机性[1],并且容易受到电源攻击的影响[8]。此外,大多数以前的方法无法通过所有NIST随机性测试。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号