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Sub-Threshold Time-Resolved Spectroscopy of Mid-UV AlGaN Laser Diode Structures Pseudomorphically Grown on Bulk AlN

机译：中UV AlGaN激光二极管结构的亚阈值时间分辨光谱结构假形式正常生长在散装ALN上

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AlGaN based heterostructures exhibit photo-pumped stimulated emission out to 237 nm with a switched from TE to TM polarized observed. PL lifetimes reflect the stronger exciton binding energy of the higher Al content material.

机译：基于AlGaN的异质结构表现出照片泵浦的刺激排放到237nm，通过从TE切换到TM偏振的偏振。 PL寿命反映了更高的Al含量材料的强激子结合能量。

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《Conference on Lasers and Electro-Optics》|2012年||共2页
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作者
Gregory A. Garrett; Paul Rotella; Hongen Shen; Michael Wraback; Thomas Wunderer; Christopher L. Chua; Zhihong Yang; John E. Northrup; Noble M. Johnson;
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中图分类 TN24-53;
关键词
Spectroscopy; Time-resolved; Semiconductor lasers;

机译：光谱学;时间分离;半导体激光器;

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专利

1. Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates [J] . Martens M., Mehnke F., Kuhn C., IEEE Photonics Technology Letters . 2014,第4期

机译：在蓝宝石和块状AlN衬底上生长的基于UV-C AlGaN的激光器的性能特征
2. AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates [J] . Toshio Nishida, Toshiki Makimoto, Hisao Saito, Applied Physics Letters . 2004,第6期

机译：在块状AlN衬底上生长的AlGaN基紫外发光二极管
3. Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates [J] . Alekseev AN, Aleksandrov SB, Byrnaz AE, Technical physics letters: Letters to the Russian journal of applied physics . 2008,第8期

机译：氨MBE在AlN / SiC衬底上生长的高功率场效应晶体管的多层AlN / AlGaN / GaN / AlGaN异质结构
4. Sub-threshold time-resolved spectroscopy of Mid-UV AlGaN laser diode structures pseudomorphically grown on bulk AlN [C] . Garrett Gregory A. 2012 Conference on Lasers and Electro-Optics. . 2012

机译：在块状AlN上假晶生长的中紫外AlGaN激光二极管结构的亚阈值时间分辨光谱
5. Point Defect Identification and Management for Sub-300 nm Light Emitting Diodes and Laser Diodes Grown on Bulk AlN Substrates. [D] . Bryan, Zachary A. 2015

机译：在块状AlN衬底上生长的亚300 nm发光二极管和激光二极管的点缺陷识别和管理。
6. Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes [O] . Jie Zhao, Hongpo Hu, Yu Lei, 2019

机译：蓝宝石衬底上具有纳米尺度厚AlN成核层的高质量无裂纹AlN薄膜的异质外延生长用于基于AlGaN的深紫外发光二极管
7. Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate [O] . Pozina, Galia, Hemmingsson, Carl, Forsberg, Urban, 2008

机译：在4H-SiC衬底上生长的AlGaN / AlN / GaN高电子迁移率晶体管结构的时间分辨光致发光特性

Sub-Threshold Time-Resolved Spectroscopy of Mid-UV AlGaN Laser Diode Structures Pseudomorphically Grown on Bulk AlN

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