Silicon carbide microresonators with high optical Q and large Kerr nonlinearity for nonlinear optics

摘要

We demonstrate an amorphous silicon carbide (a-SiC) microresonator with optical Q up to 1.3 × 10. This enables us to characterize the third-order nonlinearity of a-SiC with n2 = (5.9 ± 0.7) × 10 cm/W in the telecom band.