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A constant output power Q-band VCO with distributed cross-coupled-Gm core and A-mode pMOS varactors

机译:具有分布式交叉耦合-G M 核和A模式PMOS变容仪的恒定输出功率Q频段VCO

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This paper presents a constant output power and low DC consumption VCO fabricated in tsmc? 90 nm CMOS technology for Q-band applications. A two-pair nMOS cross-coupled transistors forms a distributed negative transconductance (-G) core to meet the start-up oscillation condition. The inductive routes of the distributed layout reduce the parasitic capacitances of the transistors and lower the DC consumption. By choosing the accumulation-mode pMOS varactors in LC-tank, the VCO has a nearly constant output power and phase noise under + 1 V tuning voltage. The oscillator achieves an output power of ?15.83 ± 0.89 dBm from 47.16 to 48.47 GHz, while the varators tunes from ?2.0 V to +1 V. The phase noise is ?88.57 dBc/Hz@ 1-MHz at the 48-GHz free-frequency. The DC consumption is 9.5 mW at the 0.75-V power supply. The chip size including the buffer amplifiers and pads is only 0.776 × 0.719 mm.
机译:本文介绍了TSMC制造的恒定输出功率和低直流消耗VCO? 90 NM CMOS技术用于Q波段应用。 双对NMOS交叉耦合晶体管形成分布式负跨导(-g)核心以满足启动振荡条件。 分布式布局的电感路线减少了晶体管的寄生电容并降低了DC消耗。 通过选择LC罐中的累积模式PMOS变容液,VCO具有近+ 1V调谐电压的几乎恒定的输出功率和相位噪声。 振荡器实现了47.16至48.47 GHz的15.83±0.89 dBm的输出功率,而变压器从?2.0 V至+1 V.相位噪声是?88.57 DBC / Hz @ 1-MHz免费 -频率。 0.75V电源的直流消耗量为9.5兆瓦。 包括缓冲放大器和焊盘的芯片尺寸仅为0.776×0.719mm。

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