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A V-band divide-by-three differential direct injection-locked frequency divider in 65-nm CMOS

机译:V波段分型逐三个差分直接注射锁定分频器65-NM CMOS

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In this paper, a novel circuit topology of CMOS divide-by-three injection-locked frequency divider is demonstrated. By using a differential direct injection pair with a LC-tank oscillator, the proposed circuit can perform the division ratio of three while the wide locking range is obtained. Based on the presented circuit architecture, a V-band frequency divider is implemented in 65-nm CMOS for demonstration. Operated at a supply voltage of 1.0 V, the divider core consumes a dc power of 5.2 mW. At an incident power of 0 dBm, the fabricated circuit exhibits an input locking range from 58.6 to 67.2 GHz. The measured output power and locked phase noise at a 1-MHz offset are −10 dBm and −127 dBc/Hz, respectively. To the authors' best knowledge, this work is the first CMOS V-band divide-by-three injection-locked frequency divider owning a locking range over 10% without any tuning mechanism reported to date.
机译:本文说明了CMOS分型逐三个注射锁定分频器的新电路拓扑。通过使用与LC箱振荡器的差分直接注入对,所提出的电路可以在获得宽锁定范围的同时执行三个分割比。基于所呈现的电路架构,V波段分频器在65-nm CMOS中实现用于演示。在电源电压为1.0 V的情况下操作,分隔芯消耗5.2 MW的直流电源。在0 dBm的入射功率下,制造的电路显示出输入锁定范围,从58.6到67.2GHz。 1-MHz偏移量的测量输出功率和锁定相位噪声分别为-10 dBm和-127 dBc / hz。对于作者的最佳知识,这项工作是第一个CMOS V波段分型逐三个注射锁定分频器,其锁定范围超过10%,没有迄今为止报告的任何调整机制。

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