High-Performance W-Band SiGe RFICs for Passive Millimeter-Wave Imaging

摘要

A W-band square-law detector was implemented in a commercial SiGe 0.12μm BiCMOS process (IBM8HP, f{sub}t=200GHz) and was integrated with a SiGe LNA and SPDT switch. The combined LNA+Detector is 0.26 mm{sup}2, achieves a peak responsivity of ～4MV/W at 94GHz with a minimum NEP ＜0.02pW/Hz{sup}(1/2), and consumes 29mA from a 1.2V supply. A low-loss W-band SPDT is also integrated on some designs for an internal 50Ω reference. The chip can achieve a temperature resolution of 0.3-0.4K with a 30ms integration time and ～20GHz bandwidth. This represents, to our knowledge, the first W-band SiGe passive mm-wave imaging chip with state-of-the-art temperature sensitivity.