Fully Integrated 23dBm Transmit chain with on-chip Power Amplifier and Balun for 802.11a application in standard 45nm CMOS process

摘要

A fully integrated transmit chain for 802.11a band with on-chip power amplifier and on-chip balun matching network in 45nm standard digital CMOS process demonstrates saturated power of +23dBm. The average efficiency is +5% and peak efficiency is +15%. A standalone class AB CMOS power amplifier with on-chip BALUN matching network was also produced and detailed characterization data is presented. Using digital pre-distortion, an EVM of -28dB is achieved at 19dBm for 5GHz band and 2.5GHz band for standalone Power Amplifier.