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Multiple Supply (Class-G) Linear Modulator and PA for Non-CE Modulation

机译:多种电源(G类)线性调制器和非CE调制的PA

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A class-G PA consisting of a class-E PA and class-G supply modulator is fabricated in a 130nm process. It operates from 1.65 and 3.3V supplies and the die area is 2×2mm. It achieves a measured Pout of 29.2dBm with a PAE of 72%. It can amplify signals with peak-to-average ratios of ~3-20dBm, or act as power control for constant envelope signals. It achieves an EVM value of 4.6%-rms for a root-raised cosine filtered, QPSK modulated signal similar to that specified in the WCDMA standard (Data rate=3.84MB/s) and an average efficiency of 45%, compared to 17% for a similar class-B PA.
机译:由A类PA和C类供应调制器组成的C类PA在130nm过程中制造。它从1.65和3.3V电源运行,模具区域为2×2mm。它达到了29.2dBm的测量噘嘴,PAE为72%。它可以扩增具有达3-20dBm的峰平均比率的信号,或者作为恒定包络信号的功率控制。它实现了4.6%-RMS的EVM值,用于根升余弦滤波,QPSK调制信号类似于WCDMA标准(数据率= 3.84MB / s)中规定的信号,平均效率为45%,而达到17%对于类似的类-b pa。

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