Experimental Verification of the Effect of Carrier Heating on Channel Noise in Deep Submicron NMOSFETs by Substrate Bias

摘要

RF noise in 0.18 μm NMOSFETs has been characterized concerning the contribution of carrier heating and hot carrier effect on channel noise. The role of carrier heating and hot carrier effect on the excess thermal noise observed in short channel MOSFET is assessed via a novel approach that modulates the channel carrier heating and number of hot carriers using substrate bias. The experimental evidence shown in this study indicates that hot carrier effect does not show too much impact on the channel noise of deep submicron MOSFETs.