High-density capacitors for SiP and SoC applications based on three-dimensional integrated metal-isolator-metal structures

摘要

This paper focuses on zirconia and TiN based metal-isolator-metal capacitors integrated in immediate vicinity to the Si substrate. A high capacitance density is aimed by significant area enhancement realized through silicon pattering. By material optimization the capacitors also withstand higher supply voltages and show excellent temperature and reliability performance independently of the 3D structure.