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A Capacitor-less LDO With Fast-transient Error Amplifier and Push-pull Differentiator

机译:一种具有快速瞬态误差放大器和推挽式差异器的电容器LDO

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This paper presents a fully-integrated and fast-transient capacitor-less low-dropout regulator (LDO) with high loop gain and bandwidth in full load range for SoC application. It utilizes a combination of a signal- and transient-current boosting (STCB) error amplifier (EA) with transient enhancement circuit (TEC) and a push-pull differentiator to drive gate capacitance of the power transistor. The STCB-based EA with TEC ensures fast response of the regulator and the differentiator is also adopted to enhance the loop stability while improving transient response simultaneously. Moreover, adaptive biasing is implemented in the circuit to compensate decrease of loop gain and bandwidth at heavy load. The proposed LDO is fabricated in a 0.5μm CMOS process and occupies an active chip area of 0.077mm~2. Simulation results demonstrate that it can deliver 100mA load current at 100mV dropout voltage. The voltage spike at the output, undergoing a maximum load current change, is controlled below 300mV and good line/load regulation is achieved at the same time.
机译:本文介绍了一个完全集成和快速的瞬态电容器的低压丢失调节器(LDO),具有高回路增益和带宽在SOC应用中的满负载范围内。它利用具有瞬态增强电路(TEC)的信号和瞬态电流升压(STCB)误差放大器(EA)和推挽差分以驱动功率晶体管的栅极电容。具有TEC的基于STCB的EA确保了调节器的快速响应,并且还采用了微分器来增强环路稳定性,同时提高瞬态响应。此外,在电路中实现了自适应偏置,以补偿重负载的环路增益和带宽的降低。所提出的LDO在0.5μmCMOS工艺中制造,占据0.077mm〜2的活性芯片面积。仿真结果表明它可以以100mV丢失电压提供100mA负载电流。输出的电压尖峰,经历最大负载电流变化,控制在300mV以下,同时实现了良好的线/负载调节。

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