Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies

摘要

Reliability and variability-aware simulations of logic cells are essential to correctly analyze and predict the performance of upcoming technologies. A simulation flow for DTCO is presented here, which combines the accuracy of TCAD with the performance of SPICE - utilizing parasitic extractions, the impedance field method for variations, and the compact-physics simulator Comphy for reliability. Good agreement with experimental RO performance of iN14 is demonstrated and projections to N3 FinFET and nanosheet technologies are made.