Embedded Select in Trench Memory (eSTM), best in class 40nm floating gate based cell: a process integration challenge

摘要

This paper discusses an innovative architecture of charge storage NVM cell, which outpaces state-of-the-art in term of bit-cell area. This new concept of memory cell is used today in production for microcontrollers. After cell architecture and activation description, we will present process flow integration challenges, process optimizations and single cell characterizations.