A novel 25 Gbps electro-optic Pockels modulator integrated on an advanced Si photonic platform

摘要

We demonstrate the first electro-optic modulator exploiting the Pockels effect, monolithically integrated on an advanced Si photonics platform. This novel technology outperforms Si photonic modulators in modulation efficiency, losses, and static tuning power. The devices, based on barium titanate thin films on 200 mm substrates, show excellent V_πL (0.3 Vcm) and V_πLα (1.7 VdB), work at high speed (25 Gbps), and can be tuned at low static power consumption (100 nW). Our concept serves as a key building block in EPIC for next generation 100G systems.