nanostructured materials; optical films; silicon; elemental semiconductors; silicon compounds; plasma CVD; high-temperature techniques; annealing; crystal microstructure; Fourier transform spectra; infrared spectra; Raman spectra; transmission electron microscopy; X-ray photoelectron spectra; photoluminescence; strong red light emission; silicon nanocrystals; SiO/sub 2/ matrix; conventional plasma enhanced chemical vapor deposition; PECVD; high temperature annealing; microstructural properties; optical properties; Fourier transform infrared spectroscopy; micro-Raman spectra; high resolution transmission electron microscopy; x-ray photoelectron spectroscopy; room temperature; PL intensity; substrate temperature; oxygen content; annealing temperature; 250 to 25 degC; SiO/sub 2/-Si; Si;
机译:嵌入SiO_x薄膜中的NiSi_2钝化的硅纳米晶体具有很强的近红外发光能力。
机译:嵌入SiO_x薄膜中的NiSi_2钝化的硅纳米晶体具有很强的近红外发光能力。
机译:嵌入SiO2基质中的硅纳米晶体的充电/放电导致总电容和隧穿电流的减少/恢复
机译:嵌入SiO / sub 2 /基质中的硅纳米晶体发出强烈的红色光
机译:离子注入的硅纳米晶体通过光电的等离子体和非等离子体效应产生的宽带光发射。
机译:ZnO纳米薄膜嵌入到SiO2基质中的Eu3 +和Tb3 +离子的薄膜样品的白光发射
机译:来自ZnO纳米晶体的薄膜样品的白色光发射,Eu3 +和Tb3 +离子嵌入SiO 2基质中