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Thin Al-Ta-O Mixture Coatings Prepared with Atomic Layer Deposition for Corrosion Protection of Steel

机译:原子层沉积制备的薄Al-Ta-O混合涂层用于钢的腐蚀防护

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Atomic Layer Deposition (ALD) is a chemical vapour deposition (CVD) based method for thin film deposition. It was originally developed for electroluminescent displays, but is now used in a wide variety of applications including microelectronics, magnetic heads and protective layers. In ALD the precursors are introduced individually to the substrate surface and separated by inert gas purging. Therefore film growth proceeds only on the substrate depositing a (sub)monolayer of film per cycle. Owing to the growth mechanism very uniform, conformal and low defect density films can be grown even on challenging 3D substrates.
机译:原子层沉积(ALD)是一种基于化学气相沉积(CVD)的薄膜沉积方法。它最初是为电致发光显示器而开发的,但现在已用于多种应用中,包括微电子,磁头和保护层。在ALD中,将前体分别引入到基材表面并通过惰性气体吹扫进行分离。因此,膜的生长仅在每个循环上沉积膜的(亚)单层的基材上进行。由于生长机理的原因,即使在具有挑战性的3D基板上也可以生长非常均匀,适形和低缺陷密度的膜。

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