Development of a single stage C-band pulsed power amplifier for radar transmitter

摘要

This paper presents the design and development of a single stage solid state pulse power amplifier (SS-PPA) working at 7.23 GHz ± 100 MHz frequency by using hybrid technology. The amplifier is designed to achieve maximum power gain with medium output power by adopting simultaneous conjugate matching procedure. Commercial available packaged pseudomorphic high electron mobility transistor (pHEMT) FPD6836P70 (from RFMD) is used for designing the amplifier. A pulse aggregate card has been developed to provide pulse bias. Plated through hole (PTH) technique is used for good high frequency grounding. At room ambient temperature, the measured peak output power from the prototype amplifier is 18.31 dBm for 8 dBm input driving power, measuring 10.31 dB gain. We present a description of the design of the amplifier, its simulated and measured results and their comparison with desired specifications.