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Non-binary WOM-codes for multilevel flash memories

机译:多级闪存的非二进制WOM代码

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A Write-Once Memory (WOM)-code is a coding scheme that allows information to be written in a memory block multiple times, but in a way that the stored values are not decreased across writes. This work studies non-binary WOM-codes with applications to flash memory. We present two constructions of non-binary WOM-codes that leverage existing high sum-rate WOM-codes defined over smaller alphabets. In many instances, these constructions provide the highest known sum-rates of the non-binary WOM-codes. In addition, we introduce a new class of codes, called level distance WOM-codes, which mitigate the difficulty of programming a flash memory cell by eliminating all small-magnitude level increases. We show how to construct such codes and state an upper bound on their sum-rate.
机译:一次写入存储器(WOM)代码是一种编码方案,它允许多次将信息写入存储块中,但方式是不会在每次写入时减小存储的值。这项工作研究非二进制WOM代码及其在闪存中的应用。我们介绍了两种非二进制WOM代码的构造,这些构造利用了在较小字母上定义的现有高和速率WOM代码。在许多情况下,这些构造提供了非二进制WOM码的最高已知总和。此外,我们引入了一类新的代码,称为电平距离WOM代码,它通过消除所有小幅度的电平增加来减轻对闪存单元进行编程的难度。我们展示了如何构造这样的代码,并说明它们的总和的上限。

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