A 1.3mW 20dB gain low power inductorless LNA with 4dB Noise Figure for 2.45GHz ISM band

摘要

This paper presents an inductorless low power (LP) low noise amplifier (LNA) based on a Common Gate (CG) topology. The circuit combines gain boosting techniques to enable high gain LP LNA. The circuit is integrated in a 130nm CMOS technology and shows 20dB gain with 4dB Noise Figure and −12dBm IIP3. The power consumption is 1.32mW from a 1.2V supply.