65nm PD-SOI glitch-free Retention Flip-Flop for MTCMOS power switch applications

摘要

This work presents a partially depleted Silicon-on-Insulator (PD-SOI) low-static power consumption Retention Flip-Flop (REFF). This flip-flop is designed in order to avoid wake-up transient glitches. In addition specific leakage reduction techniques are used to compensate the extra leakage currents induced by the SOI floating body effects. This leads to a static power consumption reduced by 2 for only 6% of extra silicon area, compared to a regular floating body implementation.