Effect of laser irradiation on the structures properties such as SiO2/Si

摘要

In this paper the results of research of influence of laser emission on electrophysical and structural parameters of SiO_2/Si system are given. Research samples were irradiated with optical fiber YLP-laser (A.=1,06 urn) with 250ns pulse length. Power of emission in impulse was (2-4) - 7,13 Wt/sm~2. As experimental sample thermal oxidated silicon base KEF-4,5 was used, which crystallographic plane was similar to (100). As a result of experiments it is shown that laser irradiation of Si/SiO_2 system can form SiO_2+silicon nanoclusters system on silicon film. Nano-engineering of SiO_2/Si system is accompanied by essential changing of electrophysical properties of initial MOS structures.