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>300GHz fixed-frequency and voltage-controlled fundamental oscillators in an InP DHBT process

机译:InP DHBT工艺中的> 300GHz固定频率和压控基频振荡器

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We report fundamental fixed-frequency and voltage-controlled oscillators operating at 300GHz fabricated in a 256nm InP DHBT technology. Oscillator designs are based on a differential series-tuned topology followed by a common-base buffer. Measured oscillation frequencies of fixed-frequency designs are 267.4, 286.8, 310.2, and 346.2GHz, at PDC=35mW. At optimum bias, the output power was measured to be −5.1, −6.9, −9.2, and −11.0 dBm for each design (no probe loss correction), with PDC≤115mW. Measured phase noise was −96.6dBc/Hz at 10MHz offset. Varactor-tuned designs demonstrated 10.6–12.3 GHz of tuning bandwidth bandwidth.
机译:我们报告了采用256nm InP DHBT技术制造的工作于300GHz的基本固定频率和压控振荡器。振荡器设计基于差分串联调谐拓扑结构,后接一个共基缓冲器。在PDC = 35mW时,固定频率设计的测得振荡频率为267.4、286.8、310.2和346.2GHz。在最佳偏置下,每种设计的输出功率分别为-5.1,-6.9,-9.2和-11.0 dBm(无探头损耗校正),PDC≤115mW。在10MHz偏移下测得的相位噪声为-96.6dBc / Hz。变容二极管调谐的设计展示了10.6–12.3 GHz的调谐带宽带宽。

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