Hall mobility in lead selenide and its analysis in MathCad computer environment

机译：硒化铅中的霍尔迁移率及其在MathCad计算机环境中的分析

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

This thesis demonstrates that current carriers in an experimental crystal diffuse on the thermal vibrations of lattice by means of regression analysis of experimental data for Hall mobility of PbSe crystals.

机译：本文通过对PbSe晶体霍尔迁移率的实验数据进行回归分析，证明了实验晶体中的载流子在晶格的热振动中扩散。

著录项

来源
《Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET'2010), 2010》|2010年|361|共1页
会议地点
作者
Budzhak Ya.S.; Zub O.V.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类通信;
关键词
Hall mobility; line of regression; statistical characteristics; thermal vibrations of lattice;

机译：霍尔迁移率回归线统计特征晶格的热振动;

相似文献

外文文献
中文文献
专利

1. The lead selenide photoconductive sensitization via oxygen ion implantation with enhanced optical absorption and carrier mobility [J] . Yang Hao, Li Xiaojiang, Mei Ting, Journal of Materials Science . 2017,第18期

机译：通过增强光学吸收和载流子迁移率通过氧离子注入引入硒化硒光电导敏感性
2. Lifetime, Mobility, and Diffusion of Photoexcited Carriers in Ligand-Exchanged Lead Selenide Nanocrystal Films Measured by Time-Resolved Terahertz Spectroscopy [J] . Guglietta Glenn W., Diroll Benjamin T., Gaulding E. Ashley, ACS nano . 2015,第2期

机译：时间分辨太赫兹光谱法测量配体交换硒化铅纳米晶薄膜中光激发载体的寿命，迁移率和扩散。
3. High carrier mobility in single ultrathin colloidal lead selenide nanowire field effect transistors [J] . Graham R., Yu D. Nano letters . 2012,第8期

机译：单个超薄胶体硒化铅纳米线场效应晶体管中的高载流子迁移率
4. Hall mobility in lead selenide and its analysis in MathCad computer environment [C] . Budzhak Ya.S., Zub O.V. Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET'2010), 2010 . 2010

机译：硒化铅中的霍尔迁移率及其在MathCad计算机环境中的分析
5. Structural studies of lead selenide-tungsten selenide, lead selenide-molybdenum selenide , and tin selenide-molybdenum selenide misfit layered compounds [D] . Smeller, Mary Magdalene 2011

机译：硒化铅-钨-硒化物，硒化铅-钼-硒化物和硒化锡-钼-硒化物错配层状化合物的结构研究
6. An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells [O] . Fahrettin Sarcan, Omer Donmez, Mustafa Gunes, 2012

机译：分析生长和退火的n型和p型调制掺杂GaInNAs / GaAs量子阱中的霍尔迁移率
7. Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors [O] . Negara Muhammad A., Veksler D., Huang J., 2011

机译：高k基In0.75Ga0.25As金属氧化物半导体高电子迁移率晶体管的有效迁移率和霍尔效应迁移率分析
8. Polishes and Etches for Tin Telluride, Lead Sulfide, Lead Selenide, and Lead Telluride: Supplement [R] . Norr, M. K. 1966

机译：锡碲化物，硫化铅，硒化铅和碲化铅的抛光和蚀刻：补充

Hall mobility in lead selenide and its analysis in MathCad computer environment

摘要

著录项

相似文献

相关主题

期刊订阅