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Substrate temperature dependence of feature profile of carbon films on substrate with submicron trenches

机译:基板温度对具有亚微米沟槽的基板上碳膜特征轮廓的依赖性

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摘要

To control deposition profile of carbon films in trenches, we have studied substrate temperature dependence of deposition rate of carbon films and we have realized anisotropic deposition of carbon films in trenches above 250° deposited by CVD plasma of toluene diluted H2, in trenches. Here, we report dependence of properties of plasma CVD carbon films on substrate temperature.
机译:为了控制沟槽中碳膜的沉积轮廓,我们研究了衬底温度对碳膜沉积速率的依赖性,并通过甲苯稀释的H 2的CVD等离子体实现了250°以上沟槽中碳膜的各向异性沉积。 inf>,在战es中。在这里,我们报告等离子CVD碳膜的性质对衬底温度的依赖性。

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